data sheet 1 05.99 sipmos ? small-signal transistor ? p channel ? enhancement mode ? logic level ? v gs(th) = -0.8...-2.0 v pin 1 pin 2 pin 3 pin 4 g d s d type v ds i d r ds(on) package marking bsp 317 -200 v -0.37 a 6 w sot-223 type ordering code tape and reel information bsp 317 q67000-s94 e6327 maximum ratings parameter symbol values unit drain source voltage v ds -200 v drain-gate voltage r gs = 20 k w v dgr -200 gate source voltage v gs 20 continuous drain current t a = 25 ?c i d -0.37 a dc drain current, pulsed t a = 25 ?c i dpuls -1.48 power dissipation t a = 25 ?c p tot 1.8 w bsp 317
bsp 317 data sheet 2 05.99 maximum ratings parameter symbol values unit chip or operating temperature t j -55 ... + 150 ?c storage temperature t stg -55 ... + 150 thermal resistance, chip to ambient air r thja 70 k/w therminal resistance, junction-soldering point 1) r thjs 10 din humidity category, din 40 040 e iec climatic category, din iec 68-1 55 / 150 / 56 1) transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm 2 copper area for drain connection electrical characteristics, at t j = 25?c, unless otherwise specified parameter symbol values unit min. typ. max. static characteristics drain- source breakdown voltage v gs = 0 v, i d = -0.25 ma, t j = 25 ?c v (br)dss -200 - - v gate threshold voltage v gs = v ds, i d = -1 ma v gs(th) -0.8 -1.1 -2 zero gate voltage drain current v ds = -200 v, v gs = 0 v, t j = 25 ?c v ds = -200 v, v gs = 0 v, t j = 125 ?c v ds = -130 v, v gs = 0 v, t j = 25 ?c i dss - - - - -10 -0.1 -100 -100 -1 a na gate-source leakage current v gs = -20 v, v ds = 0 v i gss - -10 -100 na drain-source on-state resistance v gs = -10 v, i d = -0.37 a r ds(on) - 3.4 6 w
bsp 317 data sheet 3 05.99 electrical characteristics, at t j = 25?c, unless otherwise specified parameter symbol values unit min. typ. max. dynamic characteristics transconductance v ds 3 2 * i d * r ds(on)max, i d = -0.37 a g fs 0.25 0.35 - s input capacitance v gs = 0 v, v ds = 25 v, f = 1 mhz c iss - 270 360 pf output capacitance v gs = 0 v, v ds = 25 v, f = 1 mhz c oss - 50 75 reverse transfer capacitance v gs = 0 v, v ds = 25 v, f = 1 mhz c rss - 15 25 turn-on delay time v dd = -30 v, v gs = -10 v, i d = -0.29 a r gs = 50 w t d(on) - 8 12 ns rise time v dd = -30 v, v gs = -10 v, i d = -0.29 a r gs = 50 w t r - 30 45 turn-off delay time v dd = -30 v, v gs = -10 v, i d = -0.29 a r gs = 50 w t d(off) - 80 110 fall time v dd = -30 v, v gs = -10 v, i d = -0.29 a r gs = 50 w t f - 90 120
bsp 317 data sheet 4 05.99 electrical characteristics, at t j = 25?c, unless otherwise specified parameter symbol values unit min. typ. max. reverse diode inverse diode continuous forward current t a = 25 ?c i s - - -0.37 a inverse diode direct current,pulsed t a = 25 ?c i sm - - -1.48 inverse diode forward voltage v gs = 0 v, i f = -0.74 a, t j = 25 ?c v sd - -0.95 -1.1 v
bsp 317 data sheet 5 05.99 power dissipation p tot = | ( t a ) 0 20 40 60 80 100 120 ?c 160 t a 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 w 2.0 p tot drain current i d = | ( t a ) parameter: v gs 3 -10 v 0 20 40 60 80 100 120 ?c 160 t a 0.00 -0.04 -0.08 -0.12 -0.16 -0.20 -0.24 -0.28 -0.32 a -0.38 i d safe operating area i d =f( v ds ) parameter : d = 0, t c =25?c transient thermal impedance z th ja = | ( t p ) parameter: d = t p / t -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 k/w z thjc 10 -8 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 s t p single pulse 0.01 0.02 0.05 0.10 0.20 d = 0.50
bsp 317 data sheet 6 05.99 typ. output characteristics i d = |( v ds ) parameter: t p = 80 s 0 -1 -2 -3 -4 -5 -6 -7 v -9 v ds 0.0 -0.1 -0.2 -0.3 -0.4 -0.5 -0.6 -0.7 a -0.9 i d v gs [v] a a -2.0 b b -2.5 c c -3.0 d d -3.5 e e -4.0 f f -4.5 g g -5.0 h h -6.0 i i -7.0 j j -8.0 k k -9.0 l p tot = 2w l -10.0 typ. drain-source on-resistance r ds (on) = |( i d ) parameter: t p = 80 s, t j = 25 ?c 0.00 -0.10 -0.20 -0.30 -0.40 a -0.60 i d 0 2 4 6 8 10 12 14 16 w 19 r ds (on) v gs [v] = a a -2.0 b b -2.5 c c -3.0 d d -3.5 e e -4.0 f f -4.5 g g -5.0 h h -6.0 i i -7.0 j j -8.0 k k -9.0 l l -10.0 typ. transfer characteristics i d = f ( v gs ) parameter: t p = 80 s 0 -1 -2 -3 -4 -5 -6 -7 -8 v -10 v gs 0.0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 a -1.8 i d typ. forward transconductance g fs = f ( i d ) parameter: t p = 80 s, 0.0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 a -1.6 i d 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 0.45 0.50 0.55 s 0.65 g fs
bsp 317 data sheet 7 05.99 drain-source on-resistance r ds (on) = | ( t j ) parameter: i d = -0.37 a, v gs = -10 v -60 -20 20 60 100 ?c 160 t j 0 2 4 6 8 10 12 14 w 18 r ds (on) typ 98% gate threshold voltage v gs (th) = | ( t j ) parameter: v gs = v ds , i d = -1 ma 0.0 -0.4 -0.8 -1.2 -1.6 -2.0 -2.4 -2.8 -3.2 -3.6 -4.0 v -4.6 v gs(th) -60 -20 20 60 100 ?c 160 t j 2% typ 98% typ. capacitances c = f ( v ds ) parameter: v gs =0v, f = 1 mhz 0 -5 -10 -15 -20 -25 -30 v -40 v ds 0 10 1 10 2 10 3 10 pf c c iss c rss c oss forward characteristics of reverse diode i f = | ( v sd ) parameter: t j , t p = 80 s -2 -10 -1 -10 0 -10 1 -10 a i f 0.0 -0.4 -0.8 -1.2 -1.6 -2.0 -2.4 v -3.0 v sd t j = 25 ?c typ t j = 25 ?c (98%) t j = 150 ?c typ t j = 150 ?c (98%)
bsp 317 data sheet 8 05.99 drain-source breakdown voltage v (br)dss = | ( t j ) -60 -20 20 60 100 ?c 160 t j -180 -185 -190 -195 -200 -205 -210 -215 -220 -225 -230 v -240 v (br)dss safe operating area i d =f( v ds ) parameter : d = 0.01, t c =25?c
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